APT30DS20HJ Datasheet, PDF (3/4 Pages) Microsemi Corporation – ISOTOP Schottky Diode Full Bridge Power Module

APT30DS20HJ
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.4
1.2
0.9
1
0.7
0.8
0.5
0.6
0.4
0.3
0.2
0.1
Single Pulse
0
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
60
50
40
30
T_J=125°C
20
10
T_J=25°C
0
0.0 0.2 0.4 0.6 0.8 1.0
V_F, Anode to Cathode Voltage (V)
Trr vs. Current Rate of Charge
120
T_J=125°C
100
V_R=133V
60 A
80
30 A
60
40
15 A
20
0
200
400
600
800
-di_F/dt (A/µs)
1800
1500
Q_RR vs. Current Rate Charge
T_J=125°C
V_R=133V
60 A
1200
30 A
900
600
15 A
300
0
0
200
400
600
800
-diF/dt (A/µs)
I_RRM vs. Current Rate of Charge
35
T_J=125°C
30 V_R=133V
60 A
25
30 A
20
15
15 A
10
5
0
200
400
600
800
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
1250
1000
750
500
250
0
1
10
100
1000
V_R, Reverse Voltage (V)
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