APT30DS20HJ Datasheet, PDF (2/4 Pages) Microsemi Corporation – ISOTOP Schottky Diode Full Bridge Power Module

APT30DS20HJ
All ratings @ T_j = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
V_F Diode Forward Voltage
I_RM Maximum Reverse Leakage Current
C_T Junction Capacitance
Test Conditions
Min Typ Max Unit
I_F = 30A
I_F = 60A
0.8 0.85
0.91
V
I_F = 30A
T_j = 125°C
0.67
V_R = 200V
T_j = 25°C
T_j = 125°C
0.5 _mA
15
V_R = 200V
150
pF
Dynamic Characteristics
Symbol Characteristic
t_rr Reverse Recovery Time
Q_rr Reverse Recovery Charge
I_RRM Reverse Recovery Current
t_rr Reverse Recovery Time
Q_rr Reverse Recovery Charge
I_RRM Reverse Recovery Current
Test Conditions
Min Typ Max Unit
T_j = 25°C
55
ns
T_j = 125°C
100
I_F = 30A
V_R = 133V
T_j = 25°C
190
nC
di/dt = 200A/µs ^Tj ^{= 125°C}
450
T_j = 25°C
6
A
T_j = 125°C
9
I_F = 30A
70
ns
V_R = 133V T_j = 125°C
960
nC
di/dt=700A/µs
24
A
Thermal and package characteristics
Symbol Characteristic
R_thJC
R_thJA
V_ISOL
T_J,T_STG
T_L
Torque
Junction to Case Thermal resistance
Junction to Ambient
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Wt Package Weight
Min Typ
2500
-55
29.2
Max Unit
1.2 _°C/W
20
V
150
300
°C
1.5 N.m
g
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