APT30DC60HJ Datasheet, PDF (3/3 Pages) Microsemi Corporation – ISOTOP SiC Diode Full Bridge Power Module

APT30DC60HJ
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2 _0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Characteristics
60
T_J=25°C
50
40
T_J=75°C
30
20
T_J=175°C
T_J=125°C
10
0
0 0.5 1 1.5 2 2.5 3 3.5
V_F Forward Voltage (V)
Reverse Characteristics
600
500
T_J=175°C
400
T_J=125°C
300
T_J=75°C
200
T_J=25°C
100
0
200 300 400 500 600 700 800
V_R Reverse Voltage (V)
Capacitance vs.Reverse Voltage
1200
1000
800
600
400
200
0
1
10
100
1000
V_R Reverse Voltage
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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