APT30DC60HJ Datasheet, PDF (1/3 Pages) Microsemi Corporation – ISOTOP SiC Diode Full Bridge Power Module

APT30DC60HJ
ISOTOP^® SiC Diode
Full Bridge Power Module
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ISOTOP^®
V_RRM = 600V
I_C = 30A @ Tc = 100°C
Application
• Switch mode power supplies rectifier
• Induction heating
• Welding equipment
• High speed rectifiers
Features
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
• ISOTOP^® Package (SOT-227)
• Very low stray inductance
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Low losses
• Low noise switching
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_R Maximum DC reverse Voltage
V_RRM Maximum Peak Repetitive Reverse Voltage
600
V
I_F(AV) Maximum Average Forward Current Duty cycle = 50% T_C = 100°C
30
A
I_FSM Non-Repetitive Forward Surge Current
10 µs TC = 25°C
370
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
www.microsemi.com
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