APT27GA90BD15 Datasheet, PDF (3/9 Pages) Microsemi Corporation – High Speed PT IGBT

Typical Performance Curves
50
V_GE = 15V
T_J= 55°C
40
T_J= 125°C
30
20
T_J= 25°C
10
T_J= 150°C
0
0
1
2
3
4
5
6
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (T_J = 25°C)
100
250μs PULSE
TEST<0.5 % DUTY
CYCLE
80
60
40
T_J= 25°C
20
T_J= 125°C
T_J= -55°C
0
0
6
5
2 4 6 8 10 12 14 16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
T_J = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
4
3
2
I_C = 7A
1
I_C = 14A
I_C = 28A
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
APT27GA90BD_SD15
250
15V
225
13V
200
175
11V
150
10V
125
9V
100
8V
75
7V
50
6V
25
0
0 4 8 12 16 20 24 28 32
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 25°C)
16
I_C = 14A
14
T_J = 25°C
12
V_CE = 180V
10
V_CE = 450V
8
6
V_CE = 720V
4
2
0
0
5
20
40
60
80
GATE CHARGE (nC)
FIGURE 4, Gate charge
4
I_C = 28A
3
I_C = 14A
2
I_C = 7A
1
V_GE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
0
0 25 50 75
100 125 150
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
50
40
30
20
10
0
25 50
75 100 125
150
T_C, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature