APT27GA90BD15 Datasheet, PDF (2/9 Pages) Microsemi Corporation – High Speed PT IGBT

Dynamic Characteristic
T_J = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
C_ies
C_oes
C_res
Q_g3
Q_ge
Q_gc
SSOA
t_d(on)
t_r
t_d(off)
t_f
E_on2
E⁶
off
t_d(on)
t_r
t_d(off)
t_f
E_on2
E⁶
off
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate- Collector Charge
Switching Safe Operating Area
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Capacitance
V_GE = 0V, V_CE = 25V
f = 1MHz
Gate Charge
V_GE = 15V
V_CE= 450V
I_C = 14A
T_J = 150°C, R_G = 10Ω⁴, V_GE = 15V,
L= 100uH, V_CE = 900V
Inductive Switching (25°C)
V_CC = 600V
V_GE = 15V
I_C = 14A
R_G = 10Ω⁴
T_J = +25°C
Inductive Switching (125°C)
V_CC = 600V
V_GE = 15V
I_C = 14A
R_G = 10Ω⁴
T_J = +125°C
APT27GA90BD_SD15
Min Typ Max
1390
145
30
62
8
24
Unit
pF
nC
79
A
9
8
ns
98
84
413
μJ
287
8
10
ns
137
144
760
μJ
647
Thermal and Mechanical Characteristics
Symbol Characteristic
R_θJC
R_θJC
W_T
Torque
Junction to Case Thermal Resistance (IGBT)
Junction to Case Thermal Resistance (Diode)
Package Weight
Mounting Torque (TO-247 Package), 4-40 or M3 screw
Min Typ Max Unit
-
-
.56
°C/W
1.18
-
5.9
-
g
10
in·lbf
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471.
4 R_G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 E_on2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 E_off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.