APT15GT120BR Datasheet, PDF (3/6 Pages) Advanced Power Technology – Thunderbolt IGBT

TYPICAL PERFORMANCE CURVES
45
V_GE = 15V
40
35
T_J = -55°C
30
25
T_J = 25°C
20
15
T_J = 125°C
10
5
0
012 34 5 67
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T_J = 25°C)
45
250µs PULSE
TEST<0.5 % DUTY
40
CYCLE
35
30
25
20
T_J = -55°C
15
T_J = 25°C
10
T_J = 125°C
5
0
0 2 4 6 8 10 12 14
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
6
T_J = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
5
I_C = 30A
4
I_C = 15A
3
I_C = 7.5A
2
1
0
9 10 11 12 13 14 15 16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
60
15V
50
40
30
20
APT15GT120BR_SR(G)
14V
13V
12V
11V
10V
10
9V
8V
0
0
5
10 15 20 25 30
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 125°C)
16
I_C = 15A
14 ^{TJ = 25°C}
V_CE = 240V
12
V_CE = 600V
10
8
V_CE = 960V
6
4
2
0
0 20 40 60 80 100 120
GATE CHARGE (nC)
FIGURE 4, Gate Charge
6
5
I_C = 30A
4
I_C = 15A
3
I_C = 7.5A
2
1
V_GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-50 -25 0 25 50 75 100 125
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
45
40
35
30
25
20
15
10
5
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature