APT15GT120BR Datasheet, PDF (1/6 Pages) Advanced Power Technology – Thunderbolt IGBT

TYPICAL PERFORMANCE CURVES
APT15GT120BR APTA15PGTT1152G0BTR1_2S0RS(GR)
APT15GT120BR(G) APT15GT120SR(G)
1200V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Thunderbolt IGBT^®
The Thunderblot IGBT^® is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT^® offers superior ruggedness and ultrafast
switching speed.
• Low Forward Voltage Drop
• High Freq. Switching to 50KHz
• Low Tail Current
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
(B)
TO-247
G
C
E
D³PAK
(S)
C
G
E
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T_C = 25°C unless otherwise specified.
APT15GT120BR_SR(G) ^UNIT
V_CES
V_GE
I _C1
I _C2
I _CM
SSOA
P_D
T_J,T_STG
T_L
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T_C = 25°C
Continuous Collector Current @ T_C = 110°C
Pulsed Collector Current ¹ @ T_C = 150°C
Switching Safe Operating Area @ T_J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
±30
36
18
45
45A @ 960V
250
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
V_(BR)CES
V_GE(TH)
V_CE(ON)
I _CES
I _GES
Collector-Emitter Breakdown Voltage (V_GE = 0V, I _C = 1mA)
Gate Threshold Voltage (V_CE = V_GE, I _C = 0.6mA, T_j = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = 15A, T_j = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = 15A, T_j = 125°C)
Collector Cut-off Current (V_CE = 1200V, V_GE = 0V, T_j = 25°C) ²
Collector Cut-off Current (V_CE = 1200V, V_GE = 0V, T_j = 125°C) ²
Gate-Emitter Leakage Current (V_GE = ±20V)
MIN TYP MAX Units
1200
4.5 5.5 6.5
Volts
2.5 3.0 3.6
3.8
100
µA
TBD
480 ^nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com