2N5010_1 Datasheet, PDF (3/4 Pages) Microsemi Corporation – NPN SILICON TRANSISTOR

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted) (Cont.)
Parameters / Test Conditions
Base-Emitter Saturation Voltage
I_C = 25mA
I_C = 20mA
I_B = 5mA, Pulsed
2N5010, 2N5011, 2N5012
2N5013, 2N5014, 2N5015
Collector-Emitter Saturation Voltage
I_C = 25mA
I_C = 25mA
I_C = 25mA
I_C = 20mA
I_C = 20mA
I_C = 20mA
I_B = 5mA, Pulsed
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
DYNAMIC CHARACTERISTICS
Symbol
V_BE(SAT)
V_CE(SAT)
Parameters / Test Conditions
Symbol
Magnitude of small signal short-circuit forward current transfer ratio
V_CE = 10Vdc, I_C = 25mA, f = 10MHz
2N5010, 2N5011, 2N5012
|h_fe|
V_CE = 10Vdc, I_C = 20mA, f = 10MHz
2N5013, 2N5014, 2N5015
Min.
Min.
1.0
1.0
Max.
Unit
1.0
Vdc
1.0
Vdc
1.4
Vdc
1.5
Vdc
1.6
Vdc
1.6
Vdc
1.6
Vdc
1.8
Vdc
Max.
Unit
Open circuit output capacitance
V_CB = 10V, I_E = 0, f = 2MHz
C_obo
pF
30
T4-LDS-0067 Rev. 2 (100293)
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