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2N5010_1 Datasheet, PDF (2/4 Pages) Microsemi Corporation – NPN SILICON TRANSISTOR
◁
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Collector to Base Cutoff Current
VCB = 400V
VCB = 500V
VCB = 580V
VCB = 650V
VCB = 700V
VCB = 760V
VCB = 400V
VCB = 500V
VCB = 588V
VCB = 650V
VCB = 700V
VCB = 760V
Emitter to Base Cutoff Current
VEB = 4V
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
@ TA = +150°C
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
Symbol
ICBO1
ICBO2
IEBO
Collector to Base Breakdown Voltage
IC = 0.1mAdc
IC = 0.1mAdc
IC = 0.1mAdc
IC = 0.2mAdc
IC = 0.2mAdc
IC = 0.2mAdc
Emitter to Base Breakdown Voltage
IC = 0mA
IE = 0.05mA
Collector to Emitter Breakdown Voltage
RBE = 1KΩ
IC = 0.2mA, Pulsed
Forward-Current Transfer Ratio
IC = 25mA
IC = 20mA
VCE = 10V
VCE = 10V
IC = 5mA
VCE = 10V
IC = 20mA
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
2N5010, 2N5011, 2N5012
2N5013, 2N5014, 2N5015
@ TA = -55°C
V(BR)CBO
V(BR)EBO
V(BR)CER
hFE1
hFE2
hFE3
Min.
500
600
700
800
900
1000
5
500
600
700
800
900
1000
30
30
10
10
Max.
10
10
10
10
10
10
10
10
10
10
10
10
20
Unit
nAdc
nAdc
nAdc
nAdc
nAdc
nAdc
uAdc
uAdc
uAdc
uAdc
uAdc
uAdc
uAdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
180
180
T4-LDS-0067 Rev. 2 (100293)
Page 2 of 4
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