UPGA301AE3 Datasheet, PDF (2/4 Pages) Microsemi Corporation – Nanosecond SCR SWITCH

SCOTTSDALE DIVISION
UPGA301Ae3
Nanosecond SCR SWITCH
ELECTRICAL PARAMETERS@25°C (unless otherwise specified)
Parameter
Symbol Conditions
` On characteristics (up to 100 A w/ 100 ns pulse @ Duty Cycle = 0.0001% or less)
Min. Typ. Max.
Forward Blocking Current
On - State Voltage
Gate Trigger Voltage
Gate Trigger Current
Reverse Gate Current
Holding Current
Reverse Current (Note 1)
` Switching characteristics (Tc = 25 °C)
Delay Time
Rise Time
I_DRM
V_T
V_GT
I_GT
I_GR
I_H
I_RRM
td
tr
V_DRM = 100 V, R_GK = 1 kΩ
I_T = 1 A, Ig =10 mA
V_D = 5 V, R_GS = 100 Ω
V_D = 5 V, R_GS = 10 kΩ
V_GR = 5 V
V_D = 5 V, R_GK = 1 kΩ
1.0
V_RRM = 30 V, R_GK = 1 kΩ
Ig = 20 mA, I_T = 1 A
V_D = 60 V, I_T =1 A, Ig =10 mA
dc < 1%
1.0
1.1 1.5
0.5 0.75
10 200
0.01 0.1
3.0 5.0
1
10
20
30
15
25
Circuit Commutated Turn—off
Time
Gate Trigger—on Pulse Width
tq
tpg(on)
I_T = 1.0 A , I_R = 1.0 A max,
R_GK = 1 kΩ
Ig = 10 mA, I_T = 1 A
0.3 0.5
20
50
Critical Rate of Rise
Off –State Voltage
dv/dt
V_D = 30 V, R_GK = 1 kΩ
15
30
Units
μA
V
V
μA
mA
mA
mA
ns
ns
μs
ns
V/μs
Note 1: Pulse Test intended to guarantee reverse anode voltage capability for pulse commutation. The device should not be
operated in the reverse blocking mode on a continuous basic
Copyright © 2005
7-17-05, Rev D
Microsemi
8700 E. Thomas Rd. PO Box 1390, Scottsdale Arizona 85252, 480-941-6300, Fax: [phone]
Page 2