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UM9301_05 Datasheet, PDF (2/5 Pages) Microsemi Corporation – Commercial Attenuator Diode
UM9301/UM9301SM
Commercial Attenuator Diode
PRODUCT PREVIEW
ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified)
Parameter
Symbol Conditions
Min Typ. Max
Off Characteristics
Diode Resistance
Current for RS = 75 Ω IR
Return Loss
Second Order Distortion
I = 100 mA; f = 100 MHZ
1.7
3.0
RS
I = 1 mA; f = 100 MHZ
I = 0.01 mA; f = 100 MHZ
80
150
3000 5000
RS
f = 100 MHZ
0.5 1.1 2.0
Frequency Range: 10-300MHZ
I
RS = 75 Ω @ 100MHZ
25
Diode Terminates 75 Ω line
f1 = 10 MHZ; f2 = 13 MHZ
V
P = 50 dBmV; See Test Circuit
F1 = 67 MHZ; f2 = 77 MHZ
P = 50 dBmV; See Test Circuit
55
50
70
Third Order Distortion
F1 = 10 MHZ; F2 = 13 MHZ
V
P = 50 dBmV; See Test Circuit
Triple Beat; 205 +67 –77MHZ
P = 50 dBmV; See Test Circuit
75
65
95
Cross Modulation
Distortion
12 Channel Test
V
P = 50 dBmV; See Test Circuit
75
Dix Hills Test Set
Reverse Current
Carrier Lifetime
IR
V = 75 V
τ
I = 10 mA
10
4.0
Dynamic characteristics
Capacitance
CT
V = 0V; f = 100 MHZ
0.8
Units
Ω
mA
dB
-dB
-dB
-dB
-dB
-dB
µA
µs
pF
Copyright  2005
Rev. A, 2005-07-05
PRODUCT PRELIMINARY DATA – Information contained in this document is pre-production
data, and is proprietary to Microsemi Corp. It may not be modified in any way without the express
written consent of Microsemi Corp. Product referred to herein is not guaranteed to achieve
preliminary or production status and product specifications, configurations, and availability may
change at any time.
Microsemi
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
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