SD1224 Datasheet, PDF (2/4 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS

RF PRODUCTS DIVISION
SD1224
RF & MICROWAVE TRANSISTORS
PRODUCT PREVIEW
Symbol
BV_CBO
BV_CES
BV_CEO
BV_EBO
I_CES
I_CBO
h_FE
STATIC ELECTRICAL SPECIFICATIONS (T_CASE = 25°C)
Test Conditions
SD1224
Min. Typ.
I_C = 10 mA
I_B = 0 mA
65
I_C = 200 mA
V_BE = 0 V
65
I_C = 200 mA
I_B = 0 mA
35
I_E = 10 mA
I_C = 0 mA
4.0
V_CE = 30 V
I_E = 0 mA
V_CB = 30 V
I_E = 0 mA
V_CE = 5 V
I_C = 500 mA
5
Max.
10
1
200
Units
V
V
V
V
mA
mA
Symbol
P_OUT
G_P
η_C
C_OB
DYMANIC ELECTRICAL SPECIFICATIONS (T_CASE = 25°C)
Test Conditions
SD1224
Min. Typ.
f = 175 MHz P_IN = 7.0 W V_CE = 28 V
40
f = 175 MHz P_IN = 7.0 W V_CE = 28 V
7.6
f = 175 MHz P_IN = 7.0 W V_CE = 28 V
60
f = 1 MHz
V_CB = 30 V
Max.
65
Units
W
dB
%
pF
P_IN (W)
2.0
4.0
6.0
8.0
Test Conditions: V_CE = 28 V
f = 175 MHz
IMPEDANCE DATA
P_OUT (w)
ZIN (Ω)
28.5
0.85 + j 1.20
43.0
1.05 + j 1.32
53.0
1.01 + j 1.42
60.5
1.05 + j 1.35
ZCL (Ω)
3.25 + j 7.05
4.45 + j 5.40
5.25 + 4.42
5.45 + j 4.12
Copyright  2000
MSC1643.PDF 2000-12-20
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, [phone], Fax: [phone]
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