SD1224 Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS

RF PRODUCTS DIVISION
SD1224
RF & MICROWAVE TRANSISTORS
PRODUCT PREVIEW
DESCRIPTION
The SD1224 is an epitaxial silicon NPN planar transistor designed
primarily for 28 V FM Class C RF amplifiers utilized in ground station
transmitters. This device utilizes ballasted emitter resistors and
improved metallization systems to achieve optimum load mismatch
capability.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
! 175 MHz
! 28 Volts
! Class C
! Common Emitter
! Efficiency 60% Min.
! P_OUT = 40 W Min.
! G_P = 7.6 dB Gain
APPLICATIONS/BENEFITS
! VHF FM Applications
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25°C)
Symbol
Parameter
Value
Unit
V_CBO Collector-Base Voltage
65
V
V_CEO Collector-Emitter Voltage
35
V
V_EBO
Emitter-Base Voltage
4.0
V
I_C
Device Current
5.0
A
P_DISS
Power Dissipation
60
W
T_J
Junction Temperature
+200
°C
T_STG
Storage Temperature
-65 to +150 °C
.380 4LSTUD (M135)
epoxy sealed
THERMAL DATA
R_{TH(j-c) Junction-Case Thermal Resistance}
2.9
°C/W
PIN CONNECTION
1
4
2
3
1. Collector
2. Emitter
3. Base
4. Emitter
Copyright  2000
MSC1643.PDF 2000-12-20
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, [phone], Fax: [phone]
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