SD1070 Datasheet, PDF (2/4 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS

RF PRODUCTS DIVISION
SD1070
RF & MICROWAVE TRANSISTORS
PRODUCT PREVIEW
Symbol
BV_CBO
BV_EBO
BV_CEO
I_CEO
h_FE
STATIC ELECTRICAL SPECIFICATIONS (T_CASE = 25°C)
Test Conditions
SD1070
Min. Typ.
I_C = 0.5 mA
65
I_E = 0.25 mA
4
I_C = 200 mA
40
V_CE = 30 V
V_CE = 5 V
I_C = 1 A
5
Max.
0.25
Units
V
V
V
mA
Symbol
P_OUT
η_C
G_P
C_OB
DYMANIC ELECTRICAL SPECIFICATIONS (T_CASE = 25°C)
Test Conditions
SD1070
Min. Typ.
f = 175 MHz P_IN = 3.5 V
V_CC = 28 V
13.5
f = 175 MHz P_IN = 3.5 V
V_CC = 28 V
70
f = 175 MHz P_IN = 3.5 V
V_CC = 28 V
5.8
f = 1 MHz
V_CB = 30 V
Max.
20
Units
W
%
dB
pF
Copyright  2000
MSC1642.PDF 2000-12-20
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, [phone], Fax: [phone]
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