SD1070 Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS

RF PRODUCTS DIVISION
SD1070
RF & MICROWAVE TRANSISTORS
PRODUCT PREVIEW
DESCRIPTION
This silicon epitaxial NPN planar high frequency transistor employs a
multi emitter electrode design. This feature together with a heavily diffused
base matrix located between the individual emitters results in high RF
current handling capability, high power gain, low base resistance and low
output capacitance. These transistors are intended for Class A, B, or C
amplifier, oscillator or frequency multiplier circuits and are specifically
designed for operation in the VHF-UHF region.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
! 130 - 400 MHz
! 28 Volts
! High Power Gain
! High Efficiency
! Common Emitter
! P_OUT = 13.5 W Min. @
175 MHz
APPLICATIONS/BENEFITS
! VHF - UHF Applications
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25°C)
Symbol
Parameter
Value
Unit
V_CBO Collector-Base Voltage
65
V
V_CES Collector-Emitter Voltage
40
V
V_EBO Emitter-Base Voltage
4.0
V
I_C
Device Current
3.0
A
P_DISS
Power Dissipation
23.0
W
T_J
Junction Temperature
+200
°C
T_STG Storage Temperature
-65 to +150 °C
THERMAL DATA
R_{TH(j-c) Junction-Case Thermal Resistance 7.6}
°C/W
PIN CONNECTION
2
1
3
1. Emitter
2. Base
3. Collector
Copyright  2000
MSC1642.PDF 2000-12-20
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, [phone], Fax: [phone]
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