SD1018-06 Datasheet, PDF (2/4 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Symbol
BV_CES
BV_CEO
BV_EBO
I_CBO
h_FE
I_C = 20 mA
I_C = 100 mA
I_E = 10 mA
V_CB =15 V
V_CE = 5 V
Test Conditions
V_BE = 0 V
I_B = 0 mA
I_C = 0 mA
I_E = 0 mA
I_C = 1 A
SD1018-06
Min.
Value
Typ.
Max.
Units
36
V
18
V
4.0
V
2.5
mA
5
DYNAMIC
Symbol
P_OUT
G_P
η_C
C_OB
f = 175 MHz
f = 175 MHz
f = 175 MHz
f = 1 MHz
Test Conditions
V_CE = 12.5 V
V_CE = 12.5 V
V_CE = 12.5 V
V_CB = 15 V
I_E = 0
IMPEDANCE DATA
P_IN (W)
4
8
12
F_O = 175 MHz
V_CC = 12.5 V
P_OUT (W)
21.7
37.1
46.5
Min.
Value
Typ.
Max.
Units
40
W
4.5
dB
70
%
200
pF
Z_IN (Ω)
0.8 – j 1.1
0.8 – j 1.3
0.8 – j 1.6
Z_CL (Ω)
2.2 – j 0.3
1.7 – j 0.5
1.6 – j 0.3
Rev. B – May. 2008
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
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