SD1018-06 Datasheet, PDF (1/4 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

RF AND MICROWAVE TRANSISTORS
VHF AND FM MOBILE APPLICATIONS
Features
• FM CLASS C TRANSISTOR
• 175 MHz
• 12.5 Volts
• P_OUT = 40 W MIN.
• G_P = 4.5 dB GAIN
• EFFICIENCY 70%
• COMMON EMITTER
DESCRIPTION:
The SD1018-06 is an epitaxial silicon NPN planar transistor
designed primarily for VHF mobile and marine transmitters.
The device utilizes ballasted emitter resistors and improved
metallization systems to achieve extreme ruggedness under
severe operating conditions.
SD1018-06
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_ces
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
P_DISS
Power Dissipation
T_J
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(j-c)
Junction-Case Thermal Resistance
Value
Unit
36.0
V
18.0
V
36.0
V
4.0
V
6.0
A
80.0
W
+200
°C
-65 to +150
°C
2.2
°C/W
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
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