SD1012-03 Datasheet, PDF (2/4 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS

RF PRODUCTS DIVISION
SD1012-03
RF & MICROWAVE TRANSISTORS
PRODUCT PREVIEW
Symbol
BV_CES
BV_CEO
BV_EBO
I_CES
h_FE
STATIC ELECTRICAL SPECIFICATIONS (T_CASE = 25°C)
Test Conditions
SD1012-03
Min. Typ.
I_C = 5 mA
36
I_C = 10 mA
18
I_E = 1 mA
4.0
V_CB =15 V
V_CE = 5 V
I_C = 250 mA
5
Max.
1.0
Units
V
V
V
mA
Symbol
P_OUT
η_C
G_P
C_OB
DYMANIC ELECTRICAL SPECIFICATIONS (T_CASE = 25°C)
Test Conditions
SD1012-03
Min. Typ.
f = 175 MHz P_IN = 0.75 W V_CC = 12.5 V
6.0
f = 175 MHz P_IN = 0.75 W V_CC = 12.5 V
50
f = 175 MHz P_IN = 0.75 W V_CC = 12.5 V
9.0
f = 1 MHz
V_CB = 15 V
Max.
20
Units
W
%
dB
pF
Freq.
150 MHz
175 MHz
V_CC = 12.5 V
P_IN = 1 W
IMPEDANCE DATA
ZIN (Ω)
4.90 + j 3.46
4.32 + j 3.04
ZCL (Ω)
11.4 + j 4.56
13.0 + j 7.81
Copyright  2000
MSC1626.PDF 2000-11-26
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, [phone], Fax: [phone]
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