SD1012-03 Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS

RF PRODUCTS DIVISION
SD1012-03
RF & MICROWAVE TRANSISTORS
PRODUCT PREVIEW
DESCRIPTION
The SD1012-03 is a 12.5 V Class C epitaxial silicon NPN planar
transistor designed primarily for VHF communications in the 36 – 175
MHz frequency range. Emitter ballasting is employed to achieve
excellent ruggedness under severe load mismatch conditions.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
!"175 MHz
!"12.5 Volts
!"Efficiency 50%
!"Common Emitter
!"P_OUT = 6 W Min.
!"G_P = 9 dB Gain
APPLICATIONS/BENEFITS
!"VHF Mobile
Applications
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25°C)
Symbol
Parameter
Value
Unit
V_CBO Collector-Base Voltage
36
V
V_CEO Collector-Emitter Voltage
18
V
V_CES
Collector-Emitter Voltage
36
V
V_EBO
Emitter-Base Voltage
4.0
V
I_C
Device Current
1.8
A
P_DISS
Power Dissipation (+25°C)
20
W
T_J
Junction Temperature
+200
°C
T_STG
Storage Temperature
-65 to +150
°C
THERMAL DATA
R_{TH(j-c) Junction-Case Thermal Resistance}
8.75
°C/W
Copyright  2000
MSC1626.PDF 2000-11-26
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, [phone], Fax: [phone]
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