MS3023 Datasheet, PDF (2/6 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

MS3023
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
BV_CER
BV_CBO
BV_EBO
I_CES
H_FE
CHARACTERISTICS
Collector to Emitter Breakdown
Collector to Base Breakdown
Emitter to Base Breakdown
Collector to Emitter Leakage
DC – Current Gain
TEST CONDITIONS
I_C = 5 mA, R_BE = 10 Ω
I_C = 1 mA, I_E = 0 mA
I_E = 1 mA, I_C = 0 mA
V_BE = 0 V, V_CB = 28V
I_C = 200 mA, V_CE = 5 V
MIN
45
45
3.5
-
15
TYP
-
-
-
-
-
MAX
-
-
-
1.0
120
UNITS
V
V
V
mA
-
FUNCTIONAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
P_OUT
Power Out
G_P
Power Gain
η_C
Collector Efficiency
C_OB
Output Capacitance
F = 1.0 / 2.0 GHz
V_CB = 28V
P_in = 0.5W
F = 1MHz V_CB = 28V
MIN
3.0
7.8
35
-
TYP
-
-
-
-
MAX
-
-
-
6.5
UNITS
W
dB
%
pF
Typical Impedance Values
Input
Matching
Network
DUT
Output
Matching
Network
Z_S
Frequency (GHz)
1.0
1.5
2.0
Z_S (Ω)
4.4 – j5.5
4.5 – j9.0
4.6 – j12.5
* VCC = 28V, PIN = 0.5W, POUT > 3W
Z_L
Z_L (Ω)
9.6 + j16.0
4.3 + j7.0
3.0 + j1.0
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