MS3023 Datasheet, PDF (1/6 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

MS3023
RF & Microwave Transistors
General Purpose Amplifier Applications
GENERAL DESCRIPTION
The MS3023 is a common base, hermetically sealed silicon NPN microwave power
transistor. This device is designed for Class-C applications in the 1 ~ 2 GHz
frequency range. Gold metallization and emitter ballasting provide long-term
reliability and superior ruggedness.
FEATURES
• GOLD METALLIZATIOM
• P_OUT = 3 W MINIMUN
• 2.0 GHz
• G_P = 7.8 dB
• INFINITE VSWR CAPABLE @ RATED CONDITIONS
• HERMETIC PACKAGE
• COMMON BASE CONFIGURATION
ABSOLUTE MAXIMUM RATINGS @ 25°C
SYMBOL
PARAMETER
P_DISS1
I_C1
V_CC
T_J
T_STG
θjc¹
Power Dissipation
Device Current
Collector Supply Voltage
Junction Temperature (Pulsed RF Operation)
Storage Temperature
Junction-Case Thermal Resistance
NOTES: 1. At rated output power, pulse conditions and MSC fixture
Rev. A: Apr. 2010
VALUE
12.5
550
35
+200
-65 to +150
14.0
UNITS
W
mA
V
°C
°C
°C/W
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
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