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M1MA151AT1G Datasheet, PDF (2/3 Pages) Microsemi Corporation – Single Silicon Switching Diodes
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M1MA151AT1, M1MA152AT1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Reverse Voltage Leakage Current
M1MA151AT1
M1MA152AT1
Forward Voltage
Reverse Breakdown Voltage
M1MA151AT1
M1MA152AT1
Diode Capacitance
Reverse Recovery Time (Figure 1)
2. trr Test Circuit
Symbol
Condition
Min
IR
VR = 35 V
−
VR = 75 V
VF
IF = 100 mA
−
VR
IR = 100 mA
40
80
CD
VR = 0, f = 1.0 MHz
−
trr (Note 2) IF = 10 mA, VR = 6.0 V,
−
RL = 100 W, Irr = 0.1 IR
Max Unit
0.1
mAdc
1.2
Vdc
−
Vdc
2.0
pF
3.0
ns
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
tr
tp
RL
A
t
10%
90%
VR
tp = 2 ms
tr = 0.35 ns
Figure 1. Reverse Recovery Time Equivalent Test Circuit
OUTPUT PULSE
trr
IF
t
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 W
ORDERING INFORMATION
Device
Package
Shipping†
M1MA151AT1
SC−59
M1MA151AT1G
M1MA152AT1
SC−59
(Pb−Free)
SC−59
3000 /Tape & Reel
M1MA152AT1G
SC−59
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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