M1MA151AT1G Datasheet, PDF (1/3 Pages) Microsemi Corporation – Single Silicon Switching Diodes

M1MA151AT1,
M1MA152AT1
Preferred Device
Single Silicon Switching
Diodes
These Silicon Epitaxial Planar Diodes are designed for use in ultra
high speed switching applications. These devices are housed in the
SC−59 package which is designed for low power surface mount
applications.
Features
• Fast t_rr, < 3.0 ns
• Low C_D, < 2.0 pF
• Pb−Free Packages are Available
http://onsemi.com
SC−59 PACKAGE SINGLE SILICON
SWITCHING DIODES 40/80 V−100 mA
SURFACE MOUNT
ANODE
3
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Reverse Voltage
V_R
M1MA151AT1
M1MA152AT1
Peak Reverse Voltage
V_RM
M1MA151AT1
M1MA152AT1
Forward Current
Peak Forward Current
Peak Forward Surge Current
I_F
I_FM
I_FSM
(Note 1)
Value
40
80
40
80
100
225
500
Unit
Vdc
Vdc
mAdc
mAdc
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
P_D
200
mW
Junction Temperature
T_J
150
°C
Storage Temperature
T_stg − 55 to + 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1 SEC
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 7
2
1
CATHODE NO CONNECTION
SC−59
CASE 318D
1
MARKING DIAGRAM
Mx M G
G
Mx = Device Code
x = A for 151
B for 152
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
M1MA151AT1/D