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| JANTXV2N6678 Datasheet, PDF (2/2 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR | |||
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2N6676, 2N6678, 2N6691, 2N6693 JAN SERIES
ELECTRICAL CHARACTERISTICS (conât)
Characteristics
Emitter-Base Cutoff Current
VEB = 8.0 Vdc
Collector-Base Cutoff Current
VCB = 450 Vdc
VCB = 650 Vdc
ON CHARACTERISTICS (4)
2N6676, 2N6691
2N6678, 2N6693
Forward-Current Transfer Ratio
IC = 1.0 Adc; VCE = 3.0 Vdc
IC = 15 Adc; VCE = 3.0 Vdc
Collector-Emitter Saturation Voltage
IC = 15 Adc; IB = 3.0 Adc
Base-Emitter Saturation Voltage
IC = 15 Adc; IB = 3.0 Adc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 Adc; VCE = 10 Vdc, f = 5 MHz
Output Capacitance
VCB = 10 Vdc; IE = 0, 100 kHz ⤠f ⤠1.0 MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
See Figure 3 of MIL-PRF-19500/538
Fall Time
Cross-Over Time
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 11.7 Vdc, IC = 15 Adc
Test 2
All Types
VCE = 30 Vdc, IC = 5.9 Adc
Test 3
2N6676, 2N6678
VCE = 100 Vdc, IC = 0.25 Adc
Test 4
All Types
VCE = 25 Vdc, IC = 7.0 Adc
Test 5
2N6691, 2N6693
VCE = 300 Vdc, IC = 20 mAdc
2N6676, 2N6691
VCE = 400 Vdc, IC = 10 mAdc
2N6678, 2N6693
Clamped Switching
TA = 250C; VCC = 15 Vdc
IC = 15 Adc; Clamped Voltage = 350 Vdc 2N6676, 2N6691
IC = 15 Adc; Clamped Voltage = 450 Vdc 2N6678, 2N6693
(4) Pulse Test: Pulse Width = 300µs, Duty Cycle ⤠2.0%.
Symbol
IEBO
ICBO
Min.
hFE
15
8.0
VCE(sat)
VBE(sat)
hfe
3.0
Cobo
150
td
tr
ts
tf
tc
Max.
2.0
1.0
1.0
40
20
1.0
1.5
10
500
0.1
0.6
2.5
0.5
0.5
Unit
mAdc
mAdc
Vdc
Vdc
pF
µs
µs
µs
µs
µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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