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JANTXV2N6678 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/538
Devices
2N6676
2N6678
2N6691
2N6693
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = 250C
@ TC = 250C(1)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 1.0 W/0C for TC > 250C
2) Derate linearly 34.2 mW/0C for TA > 250C
3) Derate linearly 17.1 mW/0C for TA > 250C
Symbol
VCEO
VCBO
VCEX
VEBO
IB
IC
PT
Top; Tstg
2N6676 2N6678
2N6691 2N6693
300
400
450
650
450
650
8.0
5.0
15
2N6676
2N6678
6.0(2)
175
2N6691
2N6693
3.0(3)
175
-65 to +200
Symbol
RθJC
Max.
1.0
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N6676, 2N6691
2N6678, 2N6693
V(BR)CEO
Collector-Emitter Cutoff Current
VCE = 450 Vdc, VBE = 1.5 Vdc
2N6676, 2N6691
ICEX
VCE = 650 Vdc, VBE = 1.5 Vdc
2N6678, 2N6693
Unit
Vdc
Vdc
Vdc
Vdc
Adc 2N6676, 2N6678
Adc TO-3 (TO-204AA)*
W
W
0C
Unit
0C/W
2N6691, 2N6693
TO-61*
* See Appendix A for Package
Outline
Min. Max.
Unit
300
Vdc
400
0.1
mAdc
0.1
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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