JANTXV2N6193 Datasheet, PDF (2/2 Pages) Microsemi Corporation – PNP MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/561

2N6193 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS ⁽³⁾
DC Current Gain
I_C = 0.5 Adc, V_CE = 2.0 Vdc
I_C = 2.0 Adc, V_CE = 2.0 Vdc
I_C = 5.0 Adc, V_CE = 2.0 Vdc
Collector-Emitter Saturation Voltage
I_C = 2.0 Adc, I_B = 0.2 Adc
I_C = 5.0 Adc, I_B = 0.5 Adc
Base-Emitter Saturation Voltage
I_C = 2.0 Adc, I_B = 0.2 Adc
I_C = 5.0 Adc, I_B = 0.5 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Forward-Current Transfer Ratio
I_C = 0.5 Adc, V_CE = 10 Vdc, f = 10 MHz
Output Capacitance
V_CB = 10 Vdc, I_E = 0, 100 kHz ≤ f ≤ 1.0 MHz
Output Capacitance
V_BE = 2.0 Vdc, I_C = 0, 100 kHz ≤ f ≤ 1.0 MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
VCC = -40 Vdc, V_BE(off) = 3.0 Vdc
I_C = 2.0 Adc, I_B1= 0.2 Adc
VCC = -40 Vdc I_C = 2.0 Adc,
I_B1 = -I_B2 = 0.2 Adc
SAFE OPERATING AREA
DC Tests
T_C = +25⁰C, 1 Cycle, t ≥ 0.5 s
Test 1
V_CE = 2.0 Vdc, I_C = 5.0 Adc
Test 2
V_CE = 90 Vdc, I_C = 55 mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
Symbol
h_FE
V_CE(sat)
V_BE(sat)
h_fe
C_obo
C_ibo
t_d
t_r
t_s
t_f
Min. Max. Unit
60
60
240
40
0.7
Vdc
1.2
1.2
Vdc
1.8
3.0
15
300
pF
1250
pF
100
ηs
100
ηs
2.0
µs
200
ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
120101
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