 English |
|
|
|
|
|
|
|
| JANTXV2N6193 Datasheet, PDF (1/2 Pages) Microsemi Corporation – PNP MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/561 | |||
| |||
|
TECHNICAL DATA
PNP MEDIUM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/561
Devices
2N6193
Qualified Level
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
@ TA = +250C(1)
@ TC = +250C(2)
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 5.71mW/0C for TA > +250C
2) Derate linearly 57.1mW/0C for TC > +250C
Symbol
VCEO
VCBO
VEBO
IC
IB
PT
Top, Tstg
Symbol
RθJC
2N6193
100
100
6.0
5.0
1.0
1.0
10
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
Max.
17.5
Unit
0C/W
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
IC = 50 mAdc
VCEO(sus)
Collector-Emitter Cutoff Current
VCE = 100 Vdc
ICEO
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
IEBO
Collector-Emitter Cutoff Current
VCE = 90 Vdc, VBE = 1.5 Vdc
ICEX
Collector-Base Cutoff Current
VCB = 100 Vdc
ICBO
Min.
100
TO-39*
(TO-205AD)
*See appendix A for
package outline
Max.
Unit
Vdc
100
µAdc
100
µAdc
10
µAdc
10
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese