JANTXV2N2369AUB Datasheet, PDF (2/8 Pages) Microsemi Corporation – TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Emitter-Base Cutoff Current
V_EB = 4.5Vdc
V_EB = 4.0Vdc
Collector- Base Cutoff Current
V_CB = 40Vdc
V_CB = 32Vdc
ON CHARACTERISTICS ⁽¹⁾
Forward-Current Transfer Ratio
I_C = 10mAdc, V_CE = 0.35Vdc
I_C = 30mAdc, V_CE = 0.4Vdc
I_C = 10mAdc, V_CE = 1.0Vdc
I_C = 100mAdc, V_CE = 1.0Vdc
Collector-Emitter Saturation Voltage
I_C = 10mAdc, I_B = 1.0mAdc
I_C = 30mAdc, I_B = 3.0mAdc
I_C = 100mAdc, I_B = 10mAdc
Base-Emitter Saturation Voltage
I_C = 10mAdc, I_B = 1.0mAdc
I_C = 30mAdc, I_B = 3.0mAdc
I_C = 100mAdc, I_B = 10mAdc
Symbol
I_EBO
I_CBO
h_FE
V_CE(sat)
V_BE(sat)
Min.
40
30
40
20
0.70
0.80
Max.
10
0.25
10
0.2
Unit
Adc
Adc
120
120
120
120
0.20
0.25
Vdc
0.45
0.85
0.90
Vdc
1.20
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Forward Current Transfer Ratio
I_C = 10mAdc, V_CE = 10Vdc, f = 100MHz
Output Capacitance
V_CB = 5.0Vdc, I_E = 0, 100kHz  f  1.0MHz
Input Capacitance
V_EB = 0.5Vdc, I_C = 0, 100kHz  f  1.0MHz
Symbol
|h_fe|
C_obo
C_ibo
Min.
5.0
Max.
Unit
10
4.0
pF
5.0
pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
I_C = 10mAdc; I_B1 = 3.0mAdc, I_B2 = -1.5mAdc
Turn-Off Time
I_C = 10mAdc; I_B1 = 3.0mAdc, I_B2 = -1.5mAdc
Charge Storage Time
I_C = 10mAdc; I_B1 = 10mAdc, I_B2 = 10mAdc
(1) Pulse Test: Pulse Width = 300s, Duty Cycle  2.0%.
T4-LDS-0057 Rev. 3 (110213)
Symbol
t_on
t_off
t_S
Min.
Max.
Unit
12
s
18
s
13
s
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