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| JANTX2N918 Datasheet, PDF (2/4 Pages) Microsemi Corporation – NPN LOW POWER SILICON TRANSISTOR | |||
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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Small-Signal Short-Circuit - Forward Current Transfer Ratio
IC = 4mAdc, VCE = 10Vdc, f = 100MHz
Symbol
|hfe|
Output Capacitance
VCB = 0Vdc, IE = 0, 100kHz ⤠f ⤠1.0MHz
VCB = 10Vdc, IE = 0, 100kHz ⤠f ⤠1.0MHz
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz ⤠f ⤠1.0MHz
Noise Figure (1)
VCE = 6V, IC = 1.0mA, f = 60MHz
gs = 2.5mmho
Small-Signal Power Gain (1)
VCB = 12V, IC = 6.0mA, f = 200MHz
Cobo1
Cobo2
Cibo
NF
Gpe
Collector-Base Time Constant (1)
VCB = 10V, IE = -4.0mA, f = 79.8MHz
RbâCC
Oscillator Power Output (1)
VCB = 1.5V, IC = 8.0mA, f ⥠500MHz
Po
Collector Efficiency
VCB = 15V, IC = 8.0mA, f > 500MHz
n
NOTES:
(1) For more detail see MIL-PRF-19500/301
Min.
6.0
15
30
25
Max.
Unit
18
3.0
pF
1.7
2.0
pF
6.0
dB
dB
25
ps
mW
%
T4-LDS-0010 Rev. 3 (101342)
Page 2 of 4
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