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JANTX2N918 Datasheet, PDF (1/4 Pages) Microsemi Corporation – NPN LOW POWER SILICON TRANSISTOR
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DEVICES
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/301
2N918 2N918UB
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +25°C (1)
Operating & Storage Junction Temperature Range
VCEO
VCBO
VEBO
IC
PT
Top & Tstg
15
30
3.0
50
200
-65 to +200
Note: 1) Derate linearly 1.14mW/°C above TA > 25°C
Unit
Vdc
Vdc
Vdc
mAdc
mW
°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 3mAdc
Collector-Base Cutoff Current
VCB = 30Vdc
VCB = 25Vdc
VCB = 25Vdc; TA = +150°C
Emitter-Base Cutoff Current
VEB = 3.0Vdc
VEB = 2.5Vdc
Forward-Current Transfer Ratio
IC = 0.5mAdc, VCE = 10Vdc
IC = 3.0mAdc, VCE = 1.0Vdc
IC = 10mAdc, VCE = 10Vdc
IC = 3.0mAdc, VCE = 1.0Vdc; TA = -55°C
Collector-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
Base-Emitter Voltage
IC = 10mAdc, IB = 1.0mAdc
V(BR)CEO
15
Vdc
ICBO
1.0 µAdc
10 ηAdc
1.0 µAdc
IEBO
10 µAdc
10 ηAdc
hFE
VCE(sat)
VBE(sat)
10
20 200
20
10
0.4 Vdc
1.0 Vdc
TO-72
2N918
3 PIN
2N918UB
T4-LDS-0010 Rev. 3 (101342)
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