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| JANTX2N6287 Datasheet, PDF (2/2 Pages) Microsemi Corporation – PNP DARLINGTON POWER SILICON TRANSISTOR | |||
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2N6286, 2N6287 JAN SERIES
ELECTRICAL CHARACTERISTICS (conât)
Characteristics
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = -1.0 Adc, VCE = -3.0 Vdc
IC = -10 Adc, VCE = -3.0 Vdc
IC = -20 Adc, VCE = -3.0 Vdc
Collector-Emitter Saturation Voltage
IC = -20 Adc, IB = -200 mAdc
IC = -10 Adc, IB = -40 mAdc
Base-Emitter Saturation Voltage
IC = -20 Adc, IB = -200 mAdc
Base-Emitter Voltage
IC = -10 Adc, VCE = -3.0 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = -10 Adc, VCE = -3.0 Vdc f = 1.0 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = -10 Adc, VCE = -3.0 Vdc
Output Capacitance
VCB = -10 Vdc, IE = 0, 100 kHz ⤠f ⤠1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = -30 Vdc; IC = -10 Adc; IB = -40 mAdc
Turn-Off Time
VCC = -30 Vdc; IC = -10 Adc; IB1 = IB2 = -40 mAdc
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = -8.75 Vdc, IC = -20 Adc
Test 2
All Types
VCE = -30 Vdc, IC = -5.8 Adc
Test 3
All Types
VCE = -80 Vdc, IC = -100 mAdc
2N6286
VCE = -100 Vdc, IC = -100 mAdc
2N6287
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ⤠2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
VBE(on)
hfe
hfe
Cobo
ton
toff
Min. Max. Unit
1,500
1,250
300
18,000
-3.0
Vdc
-2.0
-4.0
Vdc
-2.8
Vdc
8.0
80
300
400
pF
2.0
µs
10
µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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