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JANTX2N6287 Datasheet, PDF (1/2 Pages) Microsemi Corporation – PNP DARLINGTON POWER SILICON TRANSISTOR
TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/505
Devices
2N6286
2N6287
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation(1)
@ TC = +250C
@ TC = +1000C
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly @ 1.17 W/0C above TC > +250C
Symbol
VCEO
VCBO
VEBO
IB
IC
PT
Top, Tstg
Symbol
RθJC
2N6286 2N6287
-80
-100
-80
-100
-7.0
-0.5
-20
175
87.5
-65 to +175
Max.
0.857
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC =-100 mAdc
2N6286
2N6287
V(BR)CEO
Collector-Emitter Cutoff Current
VCE = -40 Vdc
2N6286
ICEO
VCE = -50 Vdc
Collector-Emitter Cutoff Current
2N6287
VCE = -80 Vdc, VBE = 1.5 Vdc
2N6286
ICEX
VCE = -100 Vdc, VBE = 1.5 Vdc
2N6287
Emitter-Base Cutoff Current
VEB = -7.0 Vdc
IEBO
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
Unit
0C/W
TO-3*
(TO-204AA)
*See appendix A for
package outline
Min. Max.
Unit
-80
Vdc
-100
-1.0
mAdc
-1.0
-0.5
mAdc
-0.5
-2.5
Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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