 English |
|
|
|
|
|
|
|
| JANTX2N5680 Datasheet, PDF (2/2 Pages) Microsemi Corporation – PNP POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/582 | |||
| |||
| ◁ |
2N5679, 2N5680 JAN SERIES
ELECTRICAL CHARACTERISTICS (conât)
Characteristics
Symbol
ON CHARACTERISTICS
Forward Current Transfer Ratio
IC = 250 mAdc, VCE = 2.0 Vdc
IC = 500 mAdc, VCE = 2.0 Vdc
hFE
IC = 1.0 Adc, VCE = 2.0 Vdc
Collector-Emitter Saturation Voltage
IC = 250 mAdc, IB = 25 mAdc
VCE(sat)
IC = 500 mAdc, IB = 50 mAdc
Base-Emitter Saturation Voltage
IC = 250 mAdc, IB = 25 mAdc
VBE(sat)
IC = 500 mAdc, IB = 50 mAdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal
Short Circuit Forward-Current Transfer Ratio
IC = 0.1 Adc, VCE = 10 Vdc, f = 10 kHz
Small Signal Short Circuit Forward-Current
hfe
Transfer Ratio
hfe
IC = 0.2 Adc, VCE = 1.5 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 20 Vdc, IE = 0, f = 1 MHz
Cobo
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t ⥠0.5 s
Test 1
VCE = 2 Vdc, IC = 1.0 Adc
Test 2
VCE = 10 Vdc, IC = 1.0 Adc
Test 3
VCE = 90 Vdc, IC = 50 mAdc
Min.
40
20
5
3.0
40
Max.
Unit
150
0.6
Vdc
1.0
1.1
Vdc
1.3
50
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese