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| JANTX2N5680 Datasheet, PDF (1/2 Pages) Microsemi Corporation – PNP POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/582 | |||
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TECHNICAL DATA
PNP POWER TRANSISTOR SILICON AMPLIFIER
Qualified per MIL-PRF-19500/582
Devices
2N5679
2N5680
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS (TA = 250C unless otherwise noted)
Ratings
Symbol 2N5679
2N5680
Collector-Emitter Voltage
VCEO
100
120
Collector-Base Voltage
VCBO
100
120
Emitter-Base Voltage
VEBO
4.0
4.0
Collector Current
IC
1.0
1.0
Base Current
IB
0.5
0.5
Total Power Dissipation
@ TA = +250C(1)
@ TC = +250C(2)
PT
1.0
10
1.0
10
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Top, Tstg -65 to +200 -65 to +200
Characteristics
Symbol
Max.
Thermal Resistance, Junction-to-Case
RθJC
17.5
1) Derate linearly 5.7 mW/0C for TA > +250C
2) Derate linearly 57 mW/0C for TC > +250C
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
°C
Unit
0C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
2N5679
2N5680
V(BR)CEO
100
120
Emitter-Base Cutoff Current
VEB = 4.0 Vdc
IEBO
Collector-Emitter Cutoff Current
VCE = 70 Vdc
2N5679
ICEO
VCE = 80 Vdc
2N5680
Collector-Emitter Cutoff Current
VBE = 1.5 Vdc
VCE = 100 Vdc
2N5679
ICEX
VCE = 120 Vdc
2N5680
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Max.
1.0
10
100
TO-39*
(TO-205AD)
*See appendix A for
package outline
Unit
Vdc
µAdc
µAdc
nAdc
120101
Page 1 of 2
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