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JANTX2N3810 Datasheet, PDF (2/3 Pages) Microsemi Corporation – PNP SILICON DUAL TRANSISTOR
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PNP SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500 /336
ELECTRICAL CHARACTERISTICS (con’t)
Parameters / Test Conditions
ON CHARACTERTICS
Forward-Current Transfer Ratio
IC = 10μAdc, VCE = 5.0Vdc
IC = 100μAdc, VCE = 5.0Vdc
IC = 1.0mAdc, VCE = 5.0Vdc
IC = 10mAdc, VCE = 5.0Vdc
2N3810, 2N3810L , 2N3810U
Symbol
hFE
Min.
100
150
150
125
Max.
Unit
450
450
IC = 1.0μAdc, VCE = 5.0Vdc
IC = 10μAdc, VCE = 5.0Vdc
IC = 100μAdc, VCE = 5.0Vdc
IC = 1.0mAdc, VCE = 5.0Vdc
IC = 10mAdc, VCE = 5.0Vdc
2N3811, 2N3811L, 2N3811U
hFE
75
225
300
900
300
900
250
Collector-Emitter Saturation Voltage
IC = 100μAdc, IB = 10μAdc
IC = 1.0mAdc, IB = 100μAdc
Base-Emitter Saturation Voltage
IC = 100μAdc, IB = 10μAdc
IC = 1.0mAdc, IB = 100μAdc
Base-Emitter Non-Saturation Voltage
VCE = 5.0Adc, IC = 100μAdc
VCE(sat)
VBE(sat)
VBE
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
IC = 500μAdc, VCE = 5.0Vdc, f = 30MHz
IC = 1.0mAdc, VCE = 5.0Vdc, f = 100MHz
|hfe|
1.0
1.0
Small-Signal Short Circuit Forward Current Transfer Ratio
IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz
2N3810, 2N3810L , 2N3810U
2N3811, 2N3811L , 2N3811U
hfe
150
300
Small-Signal Short Circuit Input Impedance
IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz
2N3810, 2N3810L , 2N3810U
2N3811, 2N3811L , 2N3811U
hje
3.0
3.0
Small-Signal Short Circuit Output Admittance
IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz
2N3810, 2N3810L , 2N3810U
2N3811, 2N3811L , 2N3811U
hoe
5.0
Output Capacitance
VCB = 5.0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Cobo
Input Capacitance
VEB = 5.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
CIbo
0.2
Vdc
0.25
0.7
Vdc
0.8
0.7
Vdc
5.0
600
900
30
kΩ
40
60
μmhos
5.0
pF
8.0
pF
T4-LDS-0118 Rev. 1 (091095)
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