JANTX2N3810 Datasheet, PDF (1/3 Pages) Microsemi Corporation – PNP SILICON DUAL TRANSISTOR

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
PNP SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500 /336
DEVICES
2N3810
2N3810L
2N3810U
2N3811
2N3811L
2N3811U
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T_A = +25°C
Operating & Storage Junction Temperature
Range
V_CEO
V_CBO
V_EBO
I_C
P_T
T_J, T_stg
60
Vdc
60
Vdc
5.0
Vdc
50
mAdc
One
Both
Section ¹ Sections ²
200
350
mW
-65 to +200
°C
Note:
1. Derate linearly 1.143mW/°C for T_A > +25°C (one section)
2. Derate linearly 2.00mW/°C for T_A > +25°C (both sections)
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I_C = 100μAdc
V_(BR)CEO
60
Vdc
Collector-Base Cutoff Current
V_CB = 50Vdc
V_CB = 60Vdc
Emitter-Base Cutoff Current
V_EB = 4.0Vdc
V_EB = 5.0Vdc
I_CBO
10
ηAdc
10
μAdc
I_EBO
10
ηAdc
10
μAdc
LEVELS
JAN
JANTX
JANTV
JANS
TO-78
T4-LDS-0118 Rev. 1 (091095)
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