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| JANTX2N3584 Datasheet, PDF (2/2 Pages) Microsemi Corporation – NPN HIGH POWER SILICON TRANSISTOR | |||
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ELECTRICAL CHARACTERISTICS (conât)
Characteristics
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc
IC = 100 mAdc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.125 Adc
Base-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 200 mAdc, VCE = 10 Vdc, f = 5.0 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ⤠f ⤠1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 1.0 Adc; IB = 100 mAdc; RC = 29 â¦
Turn-Off Time
VCC = 30 Vdc; IC = 1.0 Adc; IB = -IB = 100 mAdc; RC = 29 â¦
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 17.5 Vdc, IC = 2.0 Adc
Test 2
VCE = 100 Vdc, IC = 350 mAdc
Test 3
VCE = 250 Vdc, IC = 37 mAdc
2N3584
VCE = 300 Vdc, IC = 17 mAdc
2N3585
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ⤠2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
Min. Max. Unit
25
100
40
0.75
Vdc
1.4
Vdc
hfe
hfe
Cobo
ton
toff
3.0
15
25
200
120
pF
3.0
µs
7.0
µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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