JANTX2N3584 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN HIGH POWER SILICON TRANSISTOR

TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/384
Devices
2N3584
2N3585
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +25⁰C ⁽¹⁾
@ TC = +25⁰C ⁽²⁾
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly @ 14.85 mW/⁰C for TA > +25⁰C
2) Derate linearly @ 200 mW/⁰C for TC > +25⁰C
Symbol
V_CEO
V_CBO
V_CER
V_EBO
IB
I_C
P_T
T_J, T_stg
Symbol
R_θJC
2N3584 2N3585
250
300
375
500
300
400
6.0
1.0
2.0
2.5
35
-65 to +200
Max.
5.0
ELECTRICAL CHARACTERISTICS (T_C = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 10 mAdc
2N3584
2N3585
V(BR)_CEO
Collector-Base Breakdown Voltage
I_C = 15 mAdc
2N3584
2N3585
V(BR)_CER
Collector-Emitter Cutoff Current
V_CE = 150 Vdc
I_CEO
Collector-Emitter Cutoff Current
V_CE = 300 Vdc, V_BE = 1.5 Vdc
2N3584
I_CEX
V_CE = 400 Vdc, V_BE = 1.5 Vdc
Emitter-Base Cutoff Current
2N3585
V_EB = 6.0 Vdc
I_EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Units
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W
0_C
Unit
0_C/W
TO-66* (TO-213AA)
*See Appendix A for
Package Outline
Min. Max.
Unit
250
Vdc
300
375
Vdc
500
5.0
mAdc
1.0
mAdc
1.0
0.5
mAdc
120101
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2N3584, 2N3585 JAN SERIES