JANS2N2920 Datasheet, PDF (2/4 Pages) Microsemi Corporation – NPN SILICON DUAL TRANSISTOR

6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
ELECTRICAL CHARACTERISTICS (con’t)
Parameters / Test Conditions
ON CHARACTERTICS
Forward-Current Transfer Ratio
I_C = 10μAdc, V_CE = 5.0Vdc
I_C = 100μAdc, V_CE = 5.0Vdc
I_C = 1.0mAdc, V_CE = 5.0Vdc
I_C = 10μAdc, V_CE = 5.0Vdc
I_C = 100μAdc, V_CE = 5.0Vdc
I_C = 1.0mAdc, V_CE = 5.0Vdc
Symbol
2N2919, 2N2919L , 2N2919U
h_FE
2N2920, 2N2920L, 2N2920U
h_FE
Collector-Emitter Saturation Voltage
I_C = 1.0mAdc, I_B = 100μAdc
V_CE(sat)
Base-Emitter Saturation Voltage
I_C = 1.0mAdc, I_B = 100μAdc
V_BE(sat)
Min.
60
100
150
175
235
300
0.5
Max.
Unit
240
325
600
600
800
1000
0.3
Vdc
1.0
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Forward Current Transfer Ratio, Magnitude
I_C = 0.5mAdc, V_CE = 5.0Vdc, f = 20MHz
Small-Signal Short Circuit Input Impedance
I_C = 1.0mAdc, V_CE = 5Vdc, f = 1.0kHz
Small-Signal Short Circuit Output Admittance
I_C = 1.0mAdc, V_CE = 5Vdc, f = 1.0kHz
Output Capacitance
V_CB = 5.0Vdc, I_E = 0, 100kHz ≤ f ≤ 1.0MHz
Noise Figure
I_C = 10μAdc, V_CE = 5Vdc, f = 100Hz, R_G = 10kΩ
I_C = 10μAdc, V_CE = 5Vdc, f = 1.0kHz, R_G = 10kΩ
I_C = 10μAdc, V_CE = 5Vdc, f = 10kHz, R_G = 10kΩ
Symbol
|h_fe|
Min.
3.0
h_je
3.0
h_oe
C_obo
F₁
F₂
F₃
Max.
Unit
20
30
kΩ
60
μmhos
5.0
pF
5.0
3.0
dB
3.0
T4-LDS-0202 Rev. 1 (110638)
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