JANS2N2920 Datasheet, PDF (1/4 Pages) Microsemi Corporation – NPN SILICON DUAL TRANSISTOR

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
NPN SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500 /355
DEVICES
2N2919
2N2920
2N2919L 2N2919U
2N2920L 2N2920U
LEVELS
JAN
JANTX
JANTV
JANS
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T_A = +25°C
V_CEO
V_CBO
V_EBO
I_C
P_T
60
Vdc
70
Vdc
6.0
Vdc
30
mAdc
One
Both
Section ¹ Sections ²
200
350
mW
Operating & Storage Junction Temperature Range T_J, T_stg
-65 to +200
°C
NOTES:
1. Derate linearly 1.143mW/°C for T_A > +25°C (one section)
2. Derate linearly 2.000mW/°C for T_A > +25°C (both sections)
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I_C = 10mAdc; Pulsed
Symbol Min.
Max.
V_(BR)CEO
60
Collector-Base Cutoff Current
V_CB = 45Vdc
V_CB = 70Vdc
Emitter-Base Cutoff Current
V_EB = 5.0Vdc
V_EB = 6.0Vdc
I_CBO
2.0
10
I_EBO
2.0
10
Unit
Vdc
ηAdc
μAdc
ηAdc
μAdc
TO-78
U - Package
T4-LDS-0202 Rev. 1 (110638)
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