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JAN2N4150 Datasheet, PDF (2/2 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR
◁
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/394
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
Collector-Base Cutoff Current
VCB = 100Vdc
VCB = 150Vdc
VCB = 200Vdc
VCB = 80Vdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 1.0Adc, VCE = 5.0Vdc
IC = 5.0Adc, VCE = 5.0Vdc
IC = 10Adc, VCE = 5.0Vdc
Collector-Emitter Saturation Voltage
IC = 5.0Adc, IB = 0.5Adc
IC = 10Adc, IB = 1.0Adc
Base-Emitter Saturation Voltage
IC = 5.0Adc, IB = 0.5Adc
IC = 10Adc, IB = 1.0Adc
DYNAMIC CHARACTERISTICS
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
All Types
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
All Types
All Types
Symbol
ICBO
hFE
VCE(sat)
VBE(sat)
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 0.2Adc, VCE = 10Vdc, f = 10MHz
Forward Current Transfer Ratio
IC = 50mAdc, VCE = 5.0V, f = 1.0kHz
Output Capacitance
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
Symbol
|hfe|
hfe
Cobo
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Delay Time
Rise Time
Storage Time
Fall Time
VCC = 20Vdc, VBB = 5.0Vdc
IC = 5.0Adc, IB1 = 0.5Adc
VCC = 20Vdc, VBB = 5.0Vdc
IC = 5.0Adc, IB1 = -IB2 = -0.5Adc
SAFE OPERATING AREA
DC Tests
TC = +25°C, 1 Cycle, t = 1.0s
Test 1
VCE = 40Vdc, IC = 0.22Adc
Test 2
VCE = 70Vdc, IC = 90mAdc
Test 3
VCE = 120Vdc, IC = 15mAdc
VCE = 170Vdc, IC = 3.5mAdc
2N5237, 2N5237S
2N5238, 2N5238S
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%
T4-LDS-0014 Rev. 4 (082192)
Symbol
td
tr
ts
tf
Min.
50
50
50
40
10
Min.
1.5
40
40
40
Min.
Max.
10
10
10
0.1
200
225
225
120
-
0.6
2.5
1.5
25
Max.
7.5
160
160
250
350
Max.
50
500
1.5
500
Unit
µAdc
Vdc
Vdc
Unit
pF
Unit
ns
ns
µs
ns
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