JAN2N4150 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/394
DEVICES
2N4150
2N4150S
2N5237
2N5237S
2N5238
2N5238S
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
2N4150
2N4150S
2N5237 2N5238
2N5237S 2N5238S
Collector-Emitter Voltage
V_CEO
70
120
170
Collector-Base Voltage
V_CBO
100
150
200
Emitter-Base Voltage
V_EBO
10
Collector Current
Total Power Dissipation
@ T_A = +25°C ⁽¹⁾
@ T_C = +25°C ⁽²⁾
Operating & Storage Junction Temperature Range
I_C
P_T
T_j , T_stg
10
1.0
15
-65 to +200
Thermal Resistance, Junction-to Case
R_θJC
10
Junction- to Ambient
R_θJA
175
1) Derate linearly @ 5.7mW/°C for T_A > +25°C
2) Derate linearly @ 100mW/°C for T_C > +25°C
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Unit
Vdc
Vdc
Vdc
Adc
W
°C
°C/W
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 0.1mAdc
Symbol Min.
Max. Unit
2N4150, 2N4150S
70
2N5237, 2N5237S ^V(BR)CEO
120
Vdc
2N5238, 2N5238S
170
Collector-Emitter Cutoff Current
V_BE = 0.5Vdc, V_CE = 60Vdc
V_BE = 0.5Vdc, V_CE = 110Vdc
V_BE = 0.5Vdc, V_CE = 160Vdc
Collector-Emitter Cutoff Current
V_CE = 60Vdc
V_CE = 110Vdc
V_CE = 160Vdc
2N4150, 2N4150S
2N5237, 2N5237S
I_CEX
2N5238, 2N5238S
2N4150, 2N4150S
2N5237, 2N5237S
I_CEO
2N5238, 2N5238S
10
10
µAdc
10
10
10
µAdc
10
Emitter-Base Cutoff Current
V_EB = 7.0Vdc
V_EB = 5.0Vdc
I_EBO
10
0.1
µAdc
LEVELS
JAN
JANTX
JANTXV
JANS
TO-5
2N4150, 2N5237, 2N5238
TO-39
(TO-205AD)
2N4150S, 2N5237S, 2N5238S
T4-LDS-0014 Rev. 4 (082192)
Page 1 of 2