JAN2N3879 Datasheet, PDF (2/2 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR

2N3879 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS ⁽²⁾
Forward-Current Transfer Ratio
I_C = 0.5 Adc, V_CE = 5.0 Vdc
I_C = 4.0 Adc, V_CE = 5.0 Vdc
I_C = 4.0 Adc, V_CE = 2.0 Vdc
Collector-Emitter Saturation Voltage
I_C = 4.0 Adc, I_B = 0.4 Adc
Base-Emitter Saturation Voltage
I_C = 4.0 Adc, I_B = 0.4 Adc
Base-Emitter Voltage
I_C = 4.0 Adc, V_CE = 2.0 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I_C = 500 mAdc, V_CE = 10 Vdc, f = 10 MHz
Output Capacitance
V_CB = 10 Vdc, I_E = 0, 0.1 MHz ≤ f ≤ 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
V_CC = 30 Vdc; I_C = 4.0 Adc; I_B = 0.4 Adc
Turn-Off Time
V_CC = 30 Vdc; I_C = 4.0 Adc; I_B = -I_B = 0.4 Adc
SAFE OPERATING AREA
DC Tests
T_C = +25⁰C, 1 Cycle, t = 1.0 s
Test 1
V_CE = 5.0 Vdc, I_C = 7.0 Adc
Test 2
V_CE = 28 Vdc, I_C = 1.25 Adc
Test 3
V_CE = 40 Vdc, I_C = 500 mAdc
Test 4
V_CE = 75 Vdc, I_C = 100 mAdc
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
Symbol
h_FE
V_CE(sat)
V_BE(sat)
V_BE(on)
h_fe
C_obo
t_on
t_off
Min. Max. Unit
40
20
80
12
100
1.2
Vdc
2.0
Vdc
1.8
Vdc
4.0
20
175
pF
0.44
µs
1.2
µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
120101
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