JAN2N3879 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/526
Devices
2N3879
TECHNICAL DATA
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TC = 25⁰C ⁽¹⁾
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 200 mW/⁰C for TC > 25⁰C
Symbol
V_CEO
V_CBO
V_EBO
IB
I_C
P_T
T_J, T_stg
Value
75
120
7.0
5.0
7.0
35
-65 to +200
Symbol
R_θJC
Max.
5.0
ELECTRICAL CHARACTERISTICS (T_C = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 200 mAdc
V(BR)_CEO
Collector-Emitter Cutoff Current
V_CE = 50 Vdc
I_CEO
Collector-Emitter Cutoff Current
V_CE = 100 Vdc, V_BE = 1.5 Vdc
I_CEX
Collector-Base Cutoff Current
V_CB = 120 Vdc
I_CBO
Emitter-Base Cutoff Current
V_EB = 7.0 Vdc
I_EBO
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
0_C
Unit
0_C/W
TO-66*
(TO-213AA)
*See Appendix A for
Package Outline
Min. Max.
Unit
75
Vdc
5.0
Vdc
4.0
mAdc
25
mAdc
10
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
120101
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