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| JAN2N3763 Datasheet, PDF (2/2 Pages) Microsemi Corporation – PNP SWITCHING SILICON TRANSISTOR | |||
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2N3762, L, 2N3763, L, 2N3764, 2N3765 JAN SERIES
ELECTRICAL CHARACTERISTICS (conât)
Characteristics
Collector-Emitter Cutoff Current
VEB = 2.0 Vdc, VCE = 20 Vdc
2N3762, 2N3764
VEB = 2.0 Vdc, VCE = 30 Vdc
Emitter-Base Cutoff Current
2N3763, 2N3765
VEB = 2.0 Vdc
All Types
VEB = 5.0 Vdc
2N3762, 2N3764
2N3763, 2N3765
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 10 mAdc, VCE = 1.0 Vdc
IC = 150 mAdc, VCE = 1.0 Vdc
IC = 500 mAdc, VCE = 1.0 Vdc
IC = 1.0 Adc, VCE = 1.5 Vdc
2N3762, 2N3764
2N3763, 2N3765
IC = 1.5 Adc, VCE = 5.0 Vdc
2N3762, 2N3764
2N3763, 2N3765
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 150 m Adc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
IC = 1.0 Adc, IB = 100 mAdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 150 m Adc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
IC = 1.0 Adc, IB = 100 mAdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz 2N3762, 2N3764
2N3763, 2N3765
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ⤠f ⤠1.0 MHz
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz ⤠f ⤠1.0 MHz
SWITCHING CHARACTERISTICS
Delay Time VCC = 30 Vdc, VEB = 0,
Rise Time
IC = 1.0 mAdc, IB1 = 100 mAdc
Storage Time VCC = 30 Vdc, VEB = 0,
Fall Time
IC = 1.0 mAdc, IB1 = 100 mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ⤠2.0%.
Symbol
ICEX
Min.
IEBO
35
40
40
hFE
30
20
30
20
VCE(sat)
VBE(sat)
0.9
hfe
1.8
1.5
Cobo
Cibo
td
tr
ts
tf
Max.
100
100
200
10
10
140
120
80
0.1
0.22
0.5
0.9
0.8
1.0
1.2
1.4
6.0
6.0
25
80
8.0
35
80
35
Unit
ηAdc
ηAdc
µAdc
Vdc
Vdc
pF
pF
ηs
ηs
ηs
ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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