JAN2N3763 Datasheet, PDF (1/2 Pages) Microsemi Corporation – PNP SWITCHING SILICON TRANSISTOR

TECHNICAL DATA
PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/396
Devices
2N3762
2N3762L
2N3763
2N3763L
2N3764
2N3765
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N3762*
2N3764
2N3763*
2N3765
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
V_CEO
V_CBO
V_EBO
I_C
40
60
Vdc
40
60
Vdc
5.0
Vdc
1.5
Adc
2N3762* ¹ 2N3764 ²
2N3763* 2N3765
Total Power Dissipation @ TA = +25⁰C
P_T
1.0
0.5
W
Operating & Storage Junction Temp. Range T_op, T_stg
-55 to +200
0_C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
2N3762* 2N3764
2N3763* 2N3765
Thermal Resistance Junction-to-Case
R_θJC
60
88
0_C/W
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly at 5.71 mW/⁰C for TA > +25⁰C
2) Derate linearly at 2.86 mW/⁰C for TA > +25⁰C
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I_C = 10 mAdc
2N3762, 2N3764
2N3763, 2N3765
V(BR)_CEO
Collector-Base Cutoff Current
V_CB = 20 Vdc
2N3762, 2N3764
V_CB = 30 Vdc
V_CB = 40 Vdc
2N3763, 2N3765
I_CBO
2N3762, 2N3764
V_CB = 60 Vdc
2N3763, 2N3765
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Min.
40
60
TO-39* (TO-205AD)
2N3762, 2N3763
TO-5*
2N3762L, 2N3763L
TO-46* (TO-206AB)
2N3764, 2N3765
*See appendix A for
package outline
Max.
Unit
Vdc
100
100
ηAdc
10
µAdc
10
120101
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