JAN2N3716 Datasheet, PDF (2/2 Pages) Microsemi Corporation – NPN HIGH POWER SILICON TRANSISTOR

2N3715, 2N3716 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Collector-Emitter Cutoff Current
V_CE = 60 Vdc
2N3715
V_CE = 80 Vdc
ON CHARACTERISTICS ⁽³⁾
2N3716
Forward-Current Transfer Ratio
I_C = 1.0 Adc, V_CE = 2.0 Vdc
I_C = 3.0 Adc, V_CE = 2.0 Vdc
I_C = 5.0 Adc, V_CE = 2.0 Vdc
I_C = 10 Adc, V_CE = 4.0 Vdc
Collector-Emitter Saturation Voltage
I_C = 5.0 Adc, I_B = 0.5 Adc
I_C = 10 Adc, I_B = 2.0 Adc
Base-Emitter Saturation Voltage
I_C = 5.0 Adc, I_B = 0.5 Adc
I_C = 10 Adc, I_B = 2.0 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio
I_C = 0.5 Adc, V_CE = 10 Vdc, f = 100 kHz – 1.0 MHz
Forward Current Transfer Ratio
I_C = 0.5 Adc, V_CE = 10 Vdc, f = 1.0 kHz
Output Capacitance
V_CB = 10 Vdc, I_E = 0, f = 1.0 MHz
SAFE OPERATING AREA
DC Tests
T_C = +25⁰C, 1 Cycle, t ≥ 1.0 s
Test 1
V_CE = 15 Vdc, I_C = 10 Adc
Test 2
V_CE = 40 Vdc, I_C = 3.75 Adc
Test 3
V_CE = 55 Vdc, I_C = 0.9 Adc
2N3715
V_CE = 65 Vdc, I_C = 0.9 Adc
2N3716
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
Symbol
I_CES
h_FE
V_CE(sat)
V_BE(sat)
h_fe
h_fe
C_obo
Min.
Max.
1.0
1.0
Unit
mAdc
50
150
30
120
10
5.0
1.0
Vdc
2.5
1.5
3.0
Vdc
4.0
20
30
300
500
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
120101
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