JAN2N3716 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN HIGH POWER SILICON TRANSISTOR

TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/408
Devices
2N3715
2N3716
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = 25⁰C
@ TC =100⁰C
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 28.57 mW/⁰C for TA >25⁰C
2) Derate linearly 0.857 W/⁰C for TC >100⁰C
Symbol
V_CEO
V_CBO
V_EBO
IB
I_C
P_T
T_J, T_stg
2N3715 2N3716
60
80
80
100
7.0
4.0
10
5.0
85.7
-65 to +200
Symbol
R_θJC
Max.
1.17
ELECTRICAL CHARACTERISTICS (T_C = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I_C = 10 mAdc
2N3715
2N3716
V(BR)_CEO
Collector-Base Cutoff Current
V_CB = 80 Vdc
2N3715
I_CBO
V_CB = 100 Vdc
Emitter-Base Breakdown Voltage
2N3716
VEB = 7.0 Vdc
I_EBO
Collector-Emitter Cutoff Current
V_BE = 1.5 Vdc, V_CE = 60 Vdc
2N3715
I_CEX
V_BE = 1.5 Vdc, V_CE = 80 Vdc
2N3716
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
0_C
Unit
0_C/W
TO-3* (TO-204AA)
*See Appendix A for
Package Outline
Min. Max.
Unit
60
Vdc
80
10
µAdc
10
1.0
mAdc
1.0
mAdc
1.0
120101
Page 1 of 2