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| JAN2N3019S Datasheet, PDF (2/2 Pages) Microsemi Corporation – LOW POWER NPN SILICON TRANSISTOR | |||
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2N3019, 2N3019S, 2N3057A, 2N3700, 2N3700UB JAN SERIES
ELECTRICAL CHARACTERISTICS (conât)
Characteristics
OFF CHARACTERISTICS (conât)
Collector-Emitter Cutoff Current
VCE = 90 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 150 mAdc, VCE = 10 Vdc
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
IC = 1.0 Adc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ⤠f ⤠1.0 MHz
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz ⤠f ⤠1.0 MHz
SAFE OPERATING AREA
DC Tests
TC = 250C, 1 Cycle, t = 10 ms
Test 1
2N3019, 2N3019S
2N3057A, 2N3700, 2N3700UB
VCE = 10 Vdc
IC = 500 mAdc
IC = 180 mAdc
Test 2
2N3019, 2N3019S
2N3057A, 2N3700, 2N3700UB
VCE = 40 Vdc
IC = 125 mAdc
IC = 45 mAdc
Test 3
VCE = 80 Vdc
2N3019, 2N3019S
IC = 60 mAdc
2N3057A, 2N3700, 2N3700UB
IC = 22.5 mAdc
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ⤠2.0%.
Symbol
ICES
IEBO
Min. Max. Unit
10
ηAdc
10
ηAdc
hFE
VCE(sat)
VBE(sat)
hfe
hfe
Cobo
Cibo
100
300
50
200
90
50
200
15
0.2
Vdc
0.5
1.1
Vdc
80
400
5.0
20
12
pÆ
60
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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